N-Type Silicon Wafers

The Future of High-Efficiency Solar

N-Type silicon wafers provide the ideal substrate for next-generation solar technologies such as TOPCon and HJT. They offer inherently higher minority carrier lifetimes and zero light-induced degradation (LID), unlocking unprecedented module efficiencies for both utility and distributed markets.

Key Features

Zero LID / LeTID

Engineered to deliver exceptional performance and reliability in all operational environments.

Higher minority carrier lifetime

Engineered to deliver exceptional performance and reliability in all operational environments.

Perfect for TOPCon and HJT

Engineered to deliver exceptional performance and reliability in all operational environments.

Exceptional low-light performance

Engineered to deliver exceptional performance and reliability in all operational environments.

Technical Specifications

Wafer Size

M10/M11

Thickness

130μm

Dopant Type

N-Type (Phos)

Resistivity

0.5 - 2.0 Ω·cm

Industry Leading Warranty

Backed by LONGi's comprehensive product and performance warranties. See documentation for specific terms.